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| 28-32 GHz GaAs MMIC Driver Amplifier AA031P1-00 Features s Single Bias Supply Operation (5 V) s 19 dB Typical Small Signal Gain s 16 dBm Typical P1 dB Output Power at 28 GHz s 0.25 m Ti/Pd/Au Gates s 100% On-Wafer RF and DC Testing s 100% Visual Inspection to MIL-STD-883 MT 2010 0.000 0.000 0.085 2.093 2.415 2.500 0.663 Chip Outline 1.365 1.255 0.651 Description Alpha's three-stage reactively-matched 28-32 GHz GaAs MMIC driver amplifier has typical small signal gain of 19 dB with a typical P1 dB of 16 dBm at 28 GHz. The chip uses Alpha's proven 0.25 m MESFET technology, and is based upon MBE layers and electron beam lithography for the highest uniformity and repeatability. The FETs employ surface passivation to ensure a rugged, reliable part with through-substrate via holes and gold-based backside metallization to facilitate a conductive epoxy die attach process. All chips are screened for gain, output power and S-parameters prior to shipment for guaranteed performance. Designed for 28-32 GHz LMDS and digital radio bands. Dimensions indicated in mm. All DC (V) pads are 0.1 x 0.1 mm and RF In, Out pads are 0.07 mm wide. Chip thickness = 0.1 mm. Absolute Maximum Ratings Characteristic Operating Temperature (TC) Storage Temperature (TST) Bias Voltage (VD) Power In (PIN) Junction Temperature (TJ) Value -55C to +90C -65C to +150C 7 VDC 16 dBm 175C Electrical Specifications at 25C (VDS = 5 V) Parameter Drain Current Small Signal Gain Input Return Loss Output Return Loss Output Power at 1 dB Gain Compression Saturated Output Power Thermal Resistance1 1. Calculated value based on measurement of discrete FET. 2. Typical represents the median parameter value across the specified frequency range for the median chip. Condition F = 28-32 GHz F = 28-32 GHz F = 28-32 GHz F = 28 GHz F = 28 GHz Symbol IDS G RLI RLO P1 dB PSAT JC Min. 17 Typ.2 145 19 -10 -15 Max. 200 -6 -10 Unit mA dB dB dB dBm dBm C/W 14 15 16 18 101 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A 1 28-32 GHz GaAs MMIC Driver Amplifier AA031P1-00 Typical Performance Data 25 20 15 10 5 0 -5 -10 -15 -20 -25 -30 -35 -40 -45 20 22 Bias Arrangement VD = 5 V .01 F 50 pF Gain & Return Losses (dB) S21 S11 S22 RF IN RF OUT S12 24 26 28 30 32 34 For biasing on, adjust VDS from zero to the desired value (5 V recommended). For biasing off, reverse the biasing on procedure. Frequency (GHz) Typical Small Signal Performance S-Parameters (VDS = 5 V) 20 19 18 17 16 15 14 13 12 11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 Output Power @ 28 GHz Gain Circuit Schematic Output Power (dBm), Gain (dB) Detail A VDS Input Power @ 28 GHz (dBm) Typical Power Sweep (VDS = 5 V) RF IN SEE DETAIL A RF OUT 2 Alpha Industries, Inc. [781] 935-5150 * Fax [617] 824-4579 * Email sales@alphaind.com * www.alphaind.com Specifications subject to change without notice. 1/01A |
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